Amplifiers and amplifier modules with shunt inductance circuits that include high-Q capacitors

An amplifier module comprising:

• a substrate with a mounting surface;
• a first power transistor die coupled to the mounting surface, wherein the first power transistor die includes a first transistor integrated within the first power transistor die, and wherein the first transistor includes a first drain terminal and a first intrinsic drain node coupled to the first drain terminal;
• a second power transistor die coupled to the mounting surface, wherein the second power transistor die includes a second transistor integrated within the second power transistor die, and wherein the second transistor includes a second drain terminal and a second intrinsic drain node coupled to the second drain terminal;
• a phase shift and impedance inversion element connected between the first drain terminal and the second drain terminal, wherein a total electrical length between the first and second intrinsic drain nodes is ninety degrees, and the phase shift and impedance inversion element has a first electrical length that is less than ninety degrees;
• and
• a first shunt circuit coupled to the first drain terminal, wherein the first shunt circuit includes a first shunt inductance coupled in series with a first shunt capacitance, wherein the first shunt circuit is configured to at least partially resonate out a drain-source capacitance of the first transistor.