Semiconductor laser element and method of manufacturing the same
AssigneeNichia Corporation
InventorMasanao Ochiai
Life of this patent
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Abstract
A method of manufacturing a semiconductor laser element includes: providing a nitride semiconductor structure with a target emission wavelength λo, the nitride semiconductor structure having a light emission-side surface and a light reflection-side surface; forming an emission-side mirror on the light emission-side surface; and forming a reflection-side mirror on the light reflection-side surface. The semiconductor laser element has an actual wavelength λa, which is 500 nm or more and is in a range of λo±X nm (5≤X≤15). A reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a range of λo±X nm.
Claims17
A method of manufacturing a semiconductor laser element, the method comprising:
- providing a nitride semiconductor structure with a target emission wavelength λo, the nitride semiconductor structure having a light emission-side surface and a light reflection-side surface;
- forming an emission-side mirror on the light emission-side surface;
- and
- forming a reflection-side mirror on the light reflection-side surface,
- wherein the semiconductor laser element has an actual wavelength λa, which is 500 nm or more and is in a range of λo±X nm (5≤X≤15), and
- wherein a reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a range of λo±X nm.
A semiconductor laser element having an emission wavelength of 500 nm or more, the semiconductor laser element comprising:
- a nitride semiconductor structure having a light emission-side surface and a light reflection-side surface;
- an emission-side mirror disposed on the light emission-side surface;
- and
- a reflection-side mirror disposed on the light reflection-side surface,
- wherein a reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a wavelength region that has a width of 10 nm to 30 nm and includes the emission wavelength.
Dependencies are inferred from the claim text.