Hybrid photon device having etch stop layer and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDongsik Shim, Byunggil Jeong, Byounglyong Choi
Life of this patent
Estimating the term…
Abstract
Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, the front and rear etch stop layers formed respectively to either side of the first region in a length direction of the waveguide; and a group III/V light-emitting unit generating light on a region of the silicon substrate between the front and rear etch stop layers.
Claims17
A hybrid photon device comprising:
- a silicon substrate comprising a waveguide on a surface thereof, wherein the waveguide comprises a first region extending in a length direction of the waveguide;
- a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, wherein the front etch stop layer is disposed on a first side of the first region and the rear etch stop layer is disposed on a second side of the first region;
- and
- a group III/V light-emitting unit, configured to generate light, disposed on the first region of the silicon substrate between the front and rear etch stop layers.
A method of manufacturing a hybrid photon device, the method comprising:
- depositing a passivation layer on an upper surface of a silicon substrate;
- causing the passivation layer to cover a first region of the silicon substrate by patterning the passivation layer;
- forming an etch stop layer on the silicon substrate exposed by the passivation layer, by oxidizing the silicon substrate;
- removing the passivation layer;
- forming a waveguide by patterning the silicon substrate;
- bonding a group III/V semiconductor substrate, comprising a plurality of group III/V material layers, onto the silicon substrate;
- and
- forming a group III/V light-emitting unit by sequentially patterning the plurality of group III/V material layers,
- wherein the etch stop layer comprises a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, wherein the front etch stop layer is disposed on a first side of the first region and the rear etch stop layer is disposed on a second side of the first region, and the group III/V light-emitting unit is formed between the front etch stop layer and the rear etch stop layer when viewed from a plan view.
Dependencies are inferred from the claim text.