Device and method of manufacturing high-aspect ratio structures
AssigneesNederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO, Imec Vzw
InventorsSandeep Unnikrishnan, Philippe Vereecken
Life of this patent
Estimating the term…
Abstract
An method for manufacturing a electronic device is provided having a current collector capable of a high specific charge collecting area and power, but is also achieved using a simple and fast technique and resulting in a robust design that may be flexed and can be manufactured in large scale processing. To this end the electronic device comprising an electronic circuit equipped with a current collector formed by a metal substrate having a face forming a high-aspect ratio structure of pillars having an interdistance larger than 600 nm. By forming the high-aspect structure in a metal substrate, new structures can be formed that are conformal to curvature of a macroform or that can be coiled or wound and have a robust design.
Claims20
A method of manufacturing a current collector with a high-aspect ratio structure of pillars formed in a metal substrate, wherein the method comprises:
- monolithically forming elongate and aligned nanopore structures on a face of the metal substrate;
- masking the nanopore structures with a micro-pattern mask arranged to forming the nanopore structured pillars having a minimum interdistance larger than 600 nm;
- and rendering the pillars electrically conductive;
- wherein the high-aspect ratio structure is formed by removing nanopore material in the micro-pattern thus forming nanopore micropillar structures.
An electronic device comprising a current collector having a high-aspect ratio structure of pillars formed in a metal substrate, monolithically formed of elongate and aligned nanopore pillar structures on a face of the metal substrate;
- and having a minimum interdistance larger than 600 nm;
- said nanopore pillars being electrically conductive.
Dependencies are inferred from the claim text.