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US 10,381,586 B2Granted
Carbon nanotube field-effect transistor with sidewall-protected metal contacts
AssigneeInternational Business Machines Corporation
InventorsShu-Jen Han, Jianshi Tang
Life of this patent
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Abstract
A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the dielectric layer. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. Metal contacts are formed on the channel material in the openings in the patterned resist layer and over portions of the patterned resist layer to protect sidewalls of the metal contacts to prevent degradation of the metal contacts.
Claims8
A method for forming a field effect transistor, comprising:
- forming openings in a first resist layer over carbon nanotubes;
- depositing metal on the carbon nanotubes in the openings through the first resist layer and over the first resist layer and a second resist layer;
- and
- lifting off the second resist layer to form metal contacts where sidewalls of the metal contacts are protected by the first resist layer to prevent degradation of the metal contacts.
1 more element
Dependencies are inferred from the claim text.