US 10,381,584 B2 · Carbon nanotube thin film transistor and manufacturing method thereof

Abstract

The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.

Claims20

Dependent claims

A carbon nanotube thin film transistor, comprising:

a source electrode;
a drain electrode;
a channel region;
a plurality of protrusions;
and
a carbon nanotube layer;
wherein:
the channel region is between the source electrode and the drain electrode;
the plurality of protrusions are at, and extend in a length direction of, the channel region;
and
the carbon nanotube layer is formed over the plurality of protrusions after the plurality of protrusions are formed, and comprises a plurality of carbon nanotubes configured to have a direction of distribution substantially constrained by the plurality of protrusions.

8 more elements

A method for fabricating a carbon nanotube thin film transistor, comprising:

providing a substrate;
forming a gate electrode and a gate electrode insulating layer over the substrate;
and
forming a carbon nanotube layer, a pattern of a channel region, a source electrode, and a drain electrode;
wherein:
the channel region is between the source electrode and the drain electrode;
a plurality of protrusions are arranged at the channel region, and extend in a length direction of the channel region;
and
the carbon nanotube layer comprises a plurality of carbon nanotubes, and is formed over the plurality of protrusions after the plurality of protrusions are formed, such that the plurality of carbon naotubes have a direction of distribution substantially constrained by the plurality of protrusions.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/520,069Filed 17 Aug 2016

Priority

CN 2016 1 01150331 Mar 2016

Published

US 2018/0358569 A113 Dec 2018

Granted

13 Aug 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10K 10/484
Insulated gate field-effect transistors [IGFETs]: characterised by the channel regions
H10D 30/67
Insulated-gate field-effect transistors [IGFET]: thin-film transistors [TFT]
H10D 62/121
Nanowire, nanosheet or nanotube semiconductor bodies: oriented parallel to substrates
H10D 64/60
Electrodes of devices having potential barriers: electrodes characterised by their materials

Carbon nanotube thin film transistor and manufacturing method thereof

Life of this patent

Carbon nanotube thin film transistor and manufacturing method thereof

Life of this patent

Abstract

Claims20