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US 10,381,560 B2Granted
Fabrication of correlated electron material films with varying atomic or molecular concentrations of dopant species
AssigneeArm Limited
InventorsKimberly Gay Reid, Lucian Shifren
Life of this patent
Estimating the term…
Abstract
Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.
Claims18
A method of constructing a device, comprising:
- forming, in a chamber, one or more first layers of correlated electron material (CEM) over a substrate, the one or more first layers of CEM having a first atomic concentration of a first carbon-containing dopant species;
- and
- forming, over the one or more first layers of CEM, one or more second layers of CEM having a second atomic concentration of a second carbon-containing dopant species, the second atomic concentration of the second carbon-containing dopant species being substantially dissimilar from the first atomic concentration of the first carbon-containing dopant species.
A method of constructing a device, comprising:
- forming, in a chamber, one or more first layers of correlated electron material (CEM) over a substrate, forming the one or more first layers of CEM comprising varying a first atomic concentration of a first carbon-containing dopant species in the one or more first layers of CEM between boundaries of the one or more first layers of CEM according to a gradient;
- and
- forming, over the one or more first layers of CEM, one or more second layers of CEM, forming the one or more second layers of CEM comprising a maintaining a fixed second atomic concentration of a second carbon-containing species in the one or more second layers of CEM between boundaries of the one or more second layers of CEM.
A method of constructing a device, comprising:
- forming, in a chamber, one or more first layers of correlated electron material (CEM) over a substrate, forming the one or more first layers of CEM comprising a maintaining a fixed first atomic concentration of a first carbon-containing species in the one or more first layers of CEM between boundaries of the one or more first layers of CEM and
- forming, over the one or more first layers of CEM, one or more second layers of CEM, forming the one or more second layers of CEM comprising varying a first atomic concentration of a second carbon-containing dopant species in the one or more second layers of CEM between boundaries of the one or more second layers of CEM according to a gradient.
Dependencies are inferred from the claim text.