Resistive random-access memory with protected switching layer
OwnerShih-Yuan Wang, Shih-Ping Wanginventors
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Abstract
Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. The contact can be avoided by cladding the switching layer in a material such as silicon or using electrodes that may contain metal but have regions that are adjacent the switching layer and lack free metal ions except for possible trace amounts.
Claims37
A resistive random access memory device (RRAM) comprising:
- a switching layer that in operation of the RRAM changes between higher resistance state (HRS) and lower resistance state (LRS) upon application across the layer of a voltage that is below a breakdown voltage;
- said switching layer comprising metal ions and defects introduced therein by ion implantation or radiation;
- and
- a first electrode at one side of the switching layer and a second electrode at an opposite side of the switching layer, positioned to apply said voltage in said operation of the RRAM;
- wherein said electrodes are configured to keep migration of metal ions from the electrodes to the switching layer from degrading reliability or reproducibility of the RRAM.
A resistive random access memory device (RRAM) comprising:
- a switching layer that switches between higher resistance state (HRS) and lower resistance state (LRS) upon application across the layer of a voltage that is below a breakdown voltage;
- a first cladding layer at one side of the switching layer and a second cladding layer at an opposite side of the switching layer;
- and
- a first electrode on the first cladding layer and a second electrode on the second cladding layer;
- wherein said electrodes are out of physical contact with the switching layer.
A resistive random access memory device (RRAM) comprising:
- a switching layer that switches between higher resistance state (HRS) and lower resistance state (LRS) upon application across the layer of a voltage below a breakdown voltage;
- wherein said switching layer is substantially stoichiometric except for ions introduced in manufacturing the RRAM that are sufficient to cause the layer to switch between the HRS and LRS states and ions introduced due to operation of the RRAM;
- a first cladding layer at one side of the switching layer and a second cladding layer at an opposite side of the switching layer;
- and
- a first electrode on the first cladding layer and a second electrode on the second cladding layer.
Dependencies are inferred from the claim text.