Spin transfer torque memory (STTM), methods of forming the same using a non-conformal insulator, and devices including the same
AssigneeIntel Corporation
InventorsMark L. Doczy, Brian S. Doyle, Charles C. Kuo, Kaan Oguz, Kevin P. O'Brien, Satyarth Suri, Tejaswi K. Indukuri
Life of this patent
Estimating the term…
Abstract
Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for interrupting the electrical continuity of a re-deposited layer that may form on one or more sidewalls of an STTM element during its formation. Devices and systems including such STTM elements are also described.
Claims9
An integrated circuit device comprising at least one spin transfer torque memory (STTM) element, wherein:
- the STTM element comprises a substrate, a conductive layer on the substrate, and a material stack on the conductive layer, at least a portion of the material stack defining a magnetic tunnel junction (MTJ) including a fixed magnetic layer, a first dielectric layer comprising a first dielectric material, and a free magnetic layer, the magnetic tunnel junction comprising at least one sidewall, wherein a re-deposited layer is present on at least one of said sidewalls, the re-deposited layer comprising components of at least one of said fixed magnetic layer, dielectric layer, and free magnetic layer;
- and
- a gap is present in the re-deposited layer, the gap interrupting the electrical continuity of the re-deposited layer and comprising a second dielectric material.
An integrated circuit device comprising at least one spin transfer torque memory (STTM) element, wherein:
- the STTM element comprises a substrate that includes at least one groove, a conductive layer that is disposed on the substrate and present within said at least one groove, and a material stack on the conductive layer, at least a portion of the material stack defining a magnetic tunnel junction (MTJ) that includes a fixed magnetic layer, a first dielectric layer comprising a first dielectric material, and a free magnetic layer, the magnetic tunnel junction comprising at least one sidewall, wherein a re-deposited layer is present on at least one of said sidewalls, the re-deposited layer comprising components of at least one of said fixed magnetic layer, dielectric layer, and free magnetic layer;
- a gap is present in the re-deposited layer, the gap interrupting the electrical continuity of the re-deposited layer;
- and
- the width of the conductive layer is greater than the width of said MTJ in at least one dimension.
An integrated circuit device comprising at least one spin transfer torque memory (STTM) element, wherein:
- the STTM element comprises a substrate, a conductive layer on the substrate, and a material stack on the conductive layer, at least a portion of the material stack defining a magnetic tunnel junction (MTJ) including a fixed magnetic layer, a first dielectric layer having a thickness and comprising a first dielectric material, and a free magnetic layer, the magnetic tunnel junction comprising at least one sidewall, wherein a re-deposited layer is present on at least one of said sidewalls, the re-deposited layer comprising components of at least one of said fixed magnetic layer, dielectric layer, and free magnetic layer;
- and
- a gap is present in the re-deposited layer, wherein said gap is formed in a region of the re-deposited layer proximate said first dielectric layer, interrupts the electrical continuity of the re-deposited layer, and spans an entirety of the thickness of the first dielectric layer.
Dependencies are inferred from the claim text.