Integrated circuits with magnetic tunnel junctions and methods for fabricating the same

An integrated circuit comprising:

• a magnetic tunnel junction comprising:
• a fixed layer structure;
• a free layer structure that comprises one or more free layers that are magnetic;
• and
• a barrier layer that comprises a non-magnetic material and that is disposed between the fixed layer structure and the free layer structure, wherein the fixed layer structure comprises a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer, wherein the first magnetic layer comprises one or more temperature sensitive magnetic layers that comprise boron and one or more of cobalt or iron, wherein boron is present in the one or more temperature sensitive magnetic layers in an amount of from about 1 to about 30 atomic percent, and wherein the first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.

An integrated circuit comprising:

• a magnetic tunnel junction comprising:
• a fixed layer structure;
• a free layer structure that comprises one or more free layers that are magnetic;
• and
• a barrier layer that comprises a non-magnetic material and that is disposed between the fixed layer structure and the free layer structure, wherein the fixed layer structure comprises a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer, wherein the first magnetic layer comprises one or more ferromagnetic materials and one or more non-magnetic materials, wherein the one or more ferromagnetic materials comprise cobalt, iron, nickel, or a combination thereof and the one or more non-magnetic materials comprise tantalum, molybdenum, tungsten, boron, titanium, vanadium, hafnium, ruthenium, or a combination thereof, and wherein the first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.