Spin orbit torque magnetoresistive random access memory containing shielding element and method of making thereof
AssigneeSanDisk Technologies LLC
InventorJeffrey Lille
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AssigneeSanDisk Technologies LLC
InventorJeffrey Lille
Estimating the term…
A Magnetoresistive Random Access Memory (MRAM) assembly includes a first ferromagnetic shielding component, a second ferromagnetic shielding component, a plurality of MRAM cells located between the first and second ferromagnetic shielding components, a plurality of bit lines located between the first and second ferromagnetic shielding components, each bit line coupled to at least one of the plurality of MRAM cells, a plurality of word lines located between the first and second ferromagnetic shielding components, each word line coupled to at least one of the plurality of MRAM cells, a ferromagnetic yoke electrically connecting the first and second ferromagnetic shielding components, and located in an area of the assembly substantially free of the MRAM cells, bit lines, and word lines, and an insulator surrounding the magnetic yoke.
A Magnetoresistive Random Access Memory (MRAM) assembly, comprising:
A Spin Orbit Torque (SOT) Magnetoresistive Random Access Memory (MRAM) device, comprising:
A method for making a Magnetoresistive Random Access Memory (MRAM) assembly, comprising:
Dependencies are inferred from the claim text.