Method and system for engineering the secondary barrier layer in dual magnetic junctions

A magnetic memory residing on a substrate and comprising:

• a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, each of the at least one magnetic junction including a first reference layer, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the main barrier layer residing between the first reference layer and the free layer, the engineered secondary barrier layer having a second thickness less than the first thickness, the engineered secondary barrier layer having a plurality of regions having a reduced resistance less than a resistance of the secondary barrier layer, the secondary barrier layer being between the free layer and the second reference layer, each of the free layer, the first reference layer and the second reference layer having a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy;
• and
• a plurality of bit lines coupled with the plurality of magnetic storage cells.