Memory device
AssigneeToshiba Memory Corporation
InventorYuichi Ito
Life of this patent
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Abstract
A memory device includes a first element and a second element. The first element includes: first and second ferromagnets; a first nonmagnet; a first conductor; a third ferromagnet; a second conductor, and a fourth ferromagnet. The fourth ferromagnet contains a metallic element and one or more ferromagnetic elements. The second element includes: fifth and sixth ferromagnet; a second nonmagnet; a third conductor; a seventh ferromagnet; a fourth conductor; and a fifth conductor. The fifth conductor contains the metallic element and the one or more ferromagnetic elements of a quantity of 30% or less of a volume of the fifth conductor.
Claims19
A memory device comprising:
- a first element including:
- a first ferromagnet,
- a second ferromagnet,
- a first nonmagnet between the first and second ferromagnets,
- a first conductor on the second ferromagnet,
- a third ferromagnet on the first conductor,
- a second conductor on the third ferromagnet, and
- a fourth ferromagnet on the second conductor, the fourth ferromagnet containing a metallic element and one or more ferromagnetic elements;
- and
- a second element including:
- a fifth ferromagnet,
- a sixth ferromagnet,
- a second nonmagnet between the fifth and sixth ferromagnets,
- a third conductor on the sixth ferromagnet,
- a seventh ferromagnet on the third conductor,
- a fourth conductor on the seventh ferromagnet, and
- a fifth conductor on the fourth conductor, the fifth conductor containing the metallic element and the one or more ferromagnetic elements of a quantity of 30% or less of a volume of the fifth conductor.
Dependencies are inferred from the claim text.