Multi-resistance MRAM
AssigneeSanDisk Technologies LLC
InventorsYoung-Suk Choi, Won Ho Choi
Life of this patent
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Abstract
Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.
Claims14
An apparatus comprising:
- a magnetic tunnel junction (MTJ) for storing data, the magnetic tunnel junction comprising a reference layer, a barrier layer, and a free layer, the barrier layer disposed between the reference layer and the free layer, the free layer comprising:
- a nucleation region configured to form a magnetic domain wall;
- and
- an arm, narrower than the nucleation region and extending from the nucleation region, the arm comprising a plurality of pinning sites formed at predetermined locations along the arm for pinning the domain wall.
Dependencies are inferred from the claim text.