US 10,381,544 B2 · System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect

Abstract

A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode <011>single crystals of both air X-cut and Y-cut ±1:45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.

Claims23

Dependent claims

A piezoelectric system, comprising:

at least a first PMN-PT d36 structured crystal element, having a crystal composition represented by the formula:
x*ABO3−y*PbTiO3−(1-x-y)*Pb(Mg1/3Nb2/3)O3
wherein, x is defined as molar % 0 to 0.50;
y is defined as molar % 0 to 0.50;
A represents Lead (Pb) or Bismuth (Bi), and
B is represented by the one or more dopant clients selected from:
Zr
Hf
Sn
In
Sc
Tm
Nb
Ta
Zn
Yb
La
Sb
Bi
Ma
Ga
Ce
Ni
W
Cu
Fe
K
Na
Li
Ba
said at least first crystal element having a cutting direction of one of a X-cut arrangement wherein said X-cut arrangement is a zxt+45° (±20°) cut arrangement and a Y-cut arrangement, wherein said Y-cut arrangement is a zxt-45°(±20°) cut arrangement;
said at least first crystal element prepared by poling along a <011> pseudo-cubic axis of said crystal element and having a poled-bead side and a poled-tail side of said at least first crystal element.

29 more elements

A process for the preparation of a piezoelectric system, comprising the steps of:

mechanically at least a first PMN-PT d36 structured crystal element, having a crystal composition represented by the formula:
x*ABO3−y*PbTiO3−(1-x-y)*Pb(Mg1/3Nb2/3)O3
wherein, x is defined as molar % 0 to 0.50;
y is defined as molar % 0 to 0.50;
A represents Lead (Pb) or Bismuth (Bi), and
B is represented by the one or more dopant elements selected from:
Zr
Hf
Sn
In
Sc
Tm
Nb
Ta
Zn
Yb
Lu
Sb
Bi
Ma
Ga
Ce
Ni
W
Cu
Fe
K
Na
Li
Ba
cutting, said at least first crystal element having in a cutting direction of one of a X-cut arrangement wherein said X-cut arrangement is a zxt+45° (±20°) cut arrangement and a Y-cut arrangement, wherein said Y-cut arrangement is a zxt−45°(±20°) cut arrangement;
coating a conductive electrode coating on a pair of Z surfaces of said at least first crystal element;
preparing said at least first crystal element by poling along a <011> pseudo-cubic axis of said crystal element under up to 1500V/mm and defining a poled-head side and a poled-tail side of said at least first crystal element;
applying a plurality of discrete conductive adhesive pillars to less than a total surface are of said crystal element;
and
applying a conductive lead on said first crystal element.

33 more elements

Dependencies are inferred from the claim text.

System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect

Life of this patent

System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect

Life of this patent

Abstract

Claims23