High-voltage solid-state transducers and associated systems and methods
AssigneeMicron Technology, Inc.
InventorMartin F. Schubert
Life of this patent
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Abstract
High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.
Claims9
A method of forming an SST device, comprising:
- providing a plurality of SST dies, wherein each of the SST dies comprises—
- a transducer structure having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials, wherein the first and second semiconductor materials and the active region form a p-n junction,
- a first contact electrically coupled to the first semiconductor material, and
- a second contact extending along at least a portion of a backside of the first contact, wherein the second contact is a buried contact that projects through an opening in the first contact to the second semiconductor material, and
- wherein the transducer structure forms a boundary between a first region and a second region, and wherein the first contact is in the first region;
- positioning a carrier substrate in the first region;
- and
- electrically coupling the plurality of SST dies together in series between a first terminal and a second terminal, wherein the plurality of SST dies includes adjacent first and second SST dies coupled together in series, wherein the transducer structures of the first and second SST dies are separated from each by an opening, wherein the second contact of the first SST die and the first contact of the second SST die both extend into the opening and are coupled together within the opening, and wherein the first and second terminals are configured to receive an output voltage from a power supply.
A method of forming an SST device, comprising:
- forming a plurality of SST dies, wherein forming individual SST dies of the plurality of SST dies comprises—
- providing a transducer structure having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials, wherein the first and second semiconductor materials and the active region form a p-n junction, and wherein the transducer structure has a first side that defines an internal boundary of a first region of the SST die and a second side opposite that the first side that defines an internal boundary of a second region of the SST die, the first region being proximate to the first semiconductor material and the second region being proximate to the second semiconductor material;
- forming a first contact in the first region to electrically couple the first contact to the first semiconductor material;
- and
- forming at least one via through a backside of the first contact, wherein the at least one via extends through the first semiconductor material, the active region, and to the second semiconductor material;
- forming a second contact along a portion of the backside of the first contact and into the at least one via to form a buried contact;
- positioning the carrier substrate in the first region;
- and
- electrically coupling the plurality of SST dies together in series between a first terminal and a second terminal, wherein the transducer structures of adjacent SST dies are separated from each by an opening, wherein the second contact of a first of plurality of SST dies and the first contact of a second of the plurality of SST dies both extend into the opening and are coupled together within the opening, and wherein the first and second terminals are configured to receive an output voltage from a power supply.
Dependencies are inferred from the claim text.