Light-emitting diode
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorYan Cheng
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Abstract
The present invention provides a light-emitting diode. The light-emitting diode includes: an emissive layer, an electron transportation layer and a hole transportation layer that are respectively set in contact with upper and lower surfaces of the emissive layer, a first electrode set in contact with the hole transportation layer, and a second electrode set in contact with the electron transportation layer; and the electron transportation layer is formed of a material comprising graphene so that the excellent electrical conduction property and heat conduction capability of the graphene material help improve the heat dissipation capability and electron transportation capability of the light-emitting diode the electron transportation layer so as to enhance the service life and lighting efficiency of the light-emitting diode.
Claims13
A light-emitting diode, comprising:
- an emissive layer, an electron transportation layer and a hole transportation layer that are respectively set in contact with upper and lower surfaces of the emissive layer, a first electrode set in contact with the hole transportation layer, and a second electrode set in contact with the electron transportation layer, wherein the electron transportation layer is formed of graphene,
- wherein the light-emitting diode has a non-vertical structure in which the first electrode and the emissive layer are provided on a same surface of the hole transportation layer and spaced from each other;
- the electron transportation layer is arranged on the emissive layer;
- and the second electrode is arranged on the electron transportation layer.
A light-emitting diode, comprising:
- an emissive layer, an electron transportation layer and a hole transportation layer that are respectively set in contact with upper and lower surfaces of the emissive layer, a first electrode set in contact with the hole transportation layer, and a second electrode set in contact with the electron transportation layer, wherein the electron transportation layer is formed of a graphene;
- wherein the light-emitting diode has a non-vertical structure in which the first electrode and the emissive layer are provided on a same surface of the hole transportation layer and spaced from each other;
- the electron transportation layer is arranged on the emissive layer;
- and the second electrode is arranged on the electron transportation layer;
- wherein the first electrode and the second electrode are formed of a material comprising one of aluminum and copper or a combination thereof;
- and
- wherein the hole transportation layer is formed of a material comprising doped gallium nitride.
Dependencies are inferred from the claim text.