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AssigneeAuk Corp.
InventorsHyung Joo Lee, Young Jin Kim, In Kyu Jang
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The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high quality on an upper part of an AlGaInP-based light emitting diode to improve the light extraction efficiency of the light emitting diode, wherein the GaN layer has a larger band gap and a smaller refractive index than AlGaInP-based material. The AlGaInP-based light emitting diode of the present invention is characterized by forming the GaN layer on the upper surface, and the GaN layer preferably has a surface of a fine uneven pattern. The GaN layer can be grown in the same system after forming the AlGaInP-based light emitting diode without an additional process.
An AlGaInP-based light-emitting diode having both an electrode and an uppermost layer around the electrode directly upon an upper surface of the GaP window layer, wherein the uppermost layer is a rough GaN layer, and wherein both the electrode and the uppermost layer around the electrode directly contact and are on the upper surface of the GaP window layer.
Dependencies are inferred from the claim text.