Back to results
US 10,381,516 B2Granted
Semiconductor light emitting device having a recess with irregularities
AssigneeNichia Corporation
InventorsYohei Wakai, Masahiko Onishi
Life of this patent
Estimating the term…
Abstract
A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.
Claims27
A semiconductor light emitting device comprising:
- a substrate;
- a semiconductor stack including a p-type semiconductor layer, a light emitting layer, and an n-type semiconductor layer in this order above the substrate;
- a first passivation film comprising an insulating material and disposed on at least a part of the semiconductor stack;
- a metallization layer disposed between the substrate and the first passivation film;
- a second passivation film comprising an insulating material and disposed between the p-type semiconductor layer and the metallization layer;
- a plurality of n-electrodes disposed on the n-type semiconductor layer;
- and
- a p-electrode disposed between the p-type semiconductor layer and the metallization layer,
- wherein the n-type semiconductor layer defines at least one recess and has a light extraction surface defining an opening of the recess,
- wherein the recess has two slopes, the two slopes having different slope angles in a direction along which a diameter of the recess becomes narrower toward a bottom of the recess from the opening of the recess,
- wherein the two slopes include a first slope and a second slope, the first slope having a slope angle gentler than a slope angle of the second slope, and a surface of the second slope being less irregular than a surface of the first slope,
- wherein the first passivation film, continuously covers the recess and lateral surfaces of the semiconductor stack, and
- wherein, in a cross-sectional view, portions of the second passivation film are disposed alternately with portions of the p-electrode.
10 more elements
A semiconductor light emitting device comprising:
- a substrate;
- a semiconductor stack including a p-type semiconductor layer, a light emitting layer, and an n-type semiconductor layer in this order above the substrate, the n-type semiconductor layer defines recesses and has a light extraction surface that defines an opening of each of the recesses;
- and
- an n-electrode disposed on the light extraction surface in a region between openings of adjacent two of the recesses,
- wherein each of the recesses is defined by a bottom surface and two slopes, each of the two slopes having a different slope angle in a direction along which a diameter of each of the recesses becomes narrower toward the bottom surface from the opening,
- wherein the two slopes include a first slope and a second slope, the first slope having a slope angle gentler than the second slope, and a surface of the second slope being less irregular than a surface of the first slope,
- wherein a depth of each of the recesses has a length not less than a half of a thickness between the light extraction surface and the light emitting layer and less than the thickness between the light extraction surface and the light emitting layer, and
- wherein irregularities are provided on a portion of the light extraction surface, and the n-electrode is disposed on the micro irregularities.
5 more elements
A semiconductor light emitting device comprising:
- a substrate;
- a semiconductor stack including a p-type semiconductor layer, a light emitting layer, and an n-type semiconductor layer in this order above the substrate,
- wherein the n-type semiconductor layer defines a plurality of recesses and has a light extraction surface that defines an opening of each of the recesses;
- a plurality of n-electrodes disposed on the light extraction surface, wherein each of the plurality of n-electrodes is disposed in a region between openings of adjacent two of the plurality of recesses,
- wherein each of the plurality of recesses includes a bottom surface and a sloped surface;
- a first passivation film comprising an insulating material and disposed on at least a part of the semiconductor stack;
- a metallization layer disposed between the substrate and the first passivation film;
- a second passivation film comprising an insulating material and disposed between the p-type semiconductor layer and the metallization layer;
- and
- a p-electrode disposed between the p-type semiconductor layer and the metallization layer,
- wherein a diameter of each of the plurality of recesses becomes narrower toward the bottom surface from the opening,
- wherein the bottom surface of each of the recesses and the region between the openings of the plurality of recesses have irregularities, and
- wherein the plurality of recesses are located from an outermost side of each of the plurality of n-electrodes to lateral surfaces of the semiconductor stack in a cross-sectional side view of the semiconductor light emitting device.
10 more elements
Dependencies are inferred from the claim text.