Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

An optoelectronic semiconductor chip comprising:

• a semiconductor layer sequence comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer,
• wherein the p-doped semiconductor layer is electrically contacted by a p-connection contact,
• the n-doped semiconductor layer is electrically contacted by an n-connection contact,
• the semiconductor chip has at least two trenches,
• the p-connection contact is located within the first trench and the n-connection contact is located within the second trench,
• below the p-connection contact and within the first trench a first dielectric mirror element is arranged, which is electrically insulated, and
• a second dielectric mirror element that is electrically insulating is arranged at least in regions below the n-connection contact and within the second trench and between the n-connection contact and the n-doped semiconductor layer such that the n-connection contact is not in electrical contact with the n-doped semiconductor layer within the regions.