Nitride semiconductor structure and semiconductor light emitting device including the same
AssigneeGenesis Photonics Inc.
InventorsYen-Lin Lai, Jyun-De Wu, Yu-Chu Li
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Abstract
A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm −3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
Claims18
A nitride semiconductor structure comprising:
- a first type doped semiconductor layer,
- a second type doped semiconductor layer,
- a light emitting layer disposed between the first type doped semiconductor layer and the second type doped semiconductor layer;
- a gallium nitride based hole supply layer, comprising aluminum and indium, disposed between the light emitting layer and the second type doped semiconductor layer, wherein the gallium nitride based hole supply layer is doped with a second type dopant and a quadrivalent element;
- and
- a gallium nitride based second type carrier blocking layer, comprising aluminum, disposed between the gallium nitride based hole supply layer and the second type doped semiconductor layer.
A semiconductor light emitting device comprising:
- a substrate;
- a first type doped semiconductor layer disposed over the substrate;
- a gallium nitride based first type carrier blocking layer, comprising aluminum, disposed on the first type doped semiconductor layer;
- a light emitting layer disposed over the gallium nitride based first type carrier blocking layer;
- a gallium nitride based hole supply layer, comprising aluminum and indium, disposed on light emitting layer, wherein the gallium nitride based hole supply layer is doped with a second type dopant and a quadrivalent element;
- a gallium nitride based second type earlier blocking layer, comprising aluminum, disposed on the gallium nitride based hole supply layer;
- a second type doped semiconductor layer disposed over the light emitting layer;
- a first type electrode disposed on and in ohmic contact with the first type doped semiconductor layer;
- and
- a second type electrode disposed on and in ohmic contact with the second type doped semiconductor layer.
A nitride semiconductor structure comprising:
- a first type doped semiconductor layer,
- a second type doped semiconductor layer,
- a light emitting layer disposed between the first type doped semiconductor layer and the second type doped semiconductor layer;
- and
- a gallium nitride based hole supply layer, comprising indium, disposed between the light emitting layer and the second type doped semiconductor layer, wherein the gallium nitride based hole supply layer is doped with a second type dopant and a quadrivalent element, and the gallium nitride based hole supply layer is doped with the quadrivalent element at a concentration ranging from 1017 cm−3 to 1020 cm−3,
- wherein a first concentration of the second type dopant in the second type doped semiconductor layer is higher than a second concentration of the second type dopant in the gallium nitride based hole supply layer.
A semiconductor light emitting device comprising:
- a substrate;
- a first type doped semiconductor layer disposed over the substrate;
- a light emitting layer disposed over the first type doped semiconductor layer;
- a second type doped semiconductor layer disposed over the light emitting layer;
- a gallium nitride based hole supply layer, comprising indium, disposed between the light emitting layer and the second type doped semiconductor layer, wherein the gallium nitride based hole supply layer is doped with a second type dopant and a quadrivalent element, and the gallium nitride based hole supply layer is doped with the quadrivalent element at a concentration ranging from 1017 cm−3 to 1020 cm−3;
- a first type electrode disposed on and in ohmic contact with the first type doped semiconductor layer;
- and
- a second type electrode disposed on and in ohmic contact with the second type doped semiconductor layer.
Dependencies are inferred from the claim text.