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US 10,381,495 B2Granted
Photodetecting device and method of using the same
AssigneeNational Chiao Tung University
InventorsYuh-Shyong Yang, Chien-Hung Chen, Chih-Heng Lin
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Abstract
A photodetecting device and method of using the same are provided. The photodetecting device includes a transistor, a silicon nano-channel and a filter dye layer. The transistor includes a source, a drain and a gate. The silicon nano-channel connects the source and the drain, and is configured to receive light. The filter dye layer is over a light-receiving surface of the silicon nano-channel.
Claims4
A photodetecting device, comprising:
- a transistor comprising a source, a drain and a gate;
- a polycrystalline silicon nano-channel layer connecting the source and the drain, wherein the polycrystalline silicon nano-channel layer has a light-receiving surface;
- an optical filter layer over the light-receiving surface of the polycrystalline silicon nano-channel layer, wherein the optical filter layer transmits a light within a wavelength range;
- an isolation layer between the gate and the polycrystalline silicon nano-channel layer;
- and
- a solution covering the source, the drain and the optical filter layer and wrapping around the gate.
3 more elements
A photodetecting device, comprising:
- a transistor comprising a source, a drain and a gate;
- two polycrystalline silicon nano-channel layers on opposite sides of the gate and connecting the source and the drain, wherein each of the polycrystalline silicon nano-channel layer has a light-receiving surface;
- two optical filter layers over the light-receiving surfaces of the polycrystalline silicon nano-channel layers, wherein the optical filter layers transmit a light within a wavelength range;
- and
- an isolation layer between the polycrystalline silicon nano-channel layers, and surrounding the gate.
2 more elements
Dependencies are inferred from the claim text.