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US 10,381,492 B2Granted
MOS capacitor and image sensor having the same
AssigneeSK hynix Inc.
InventorsSun-Ha Hwang, Pyong-Su Kwag, Sang-Uk Park, Kwang-Deok Kim, Ho-Ryeong Lee, Ju-Tae Ryu
Life of this patent
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Abstract
A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.
Claims10
A MOS capacitor comprising:
- an isolation layer formed in a substrate to define an active region;
- a first electrode comprising:
- an impurity region formed in the active region and spaced from the isolation layer;
- a plurality of first plugs electrically coupled to the impurity region through an interlayer dielectric layer formed over the substrate;
- and one or more first conductive patterns formed over the interlayer dielectric layer and electrically coupled to the plurality of first plugs;
- and
- a second electrode comprising:
- a gate formed over the substrate overlapping the impurity region and having a plurality of gate patterns adjacent to each other with a gap therebetween;
- a plurality of second plugs electrically coupled to the gate through the interlayer dielectric layer;
- and one or more second conductive patterns formed over the interlayer dielectric layer and electrically coupled to the plurality of second plugs.
7 more elements
Dependencies are inferred from the claim text.