Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device comprising:

• forming a first p-type silicon carbide region by performing a first ion implantation of a p-type impurity from a side of a first plane into a silicon carbide layer having the first plane and a second plane;
• forming a second p-type silicon carbide region having a higher p-type impurity concentration than the first p-type silicon carbide region and having shallower depth than the first p-type silicon carbide region by performing a second ion implantation of the p-type impurity from the side of the first plane into the silicon carbide layer;
• performing first heat treatment at 1650° C. or more and 1900° C. or less;
• performing second heat treatment at 1300° C. or more and 1500° C. or less in an N2 gas having an oxygen partial pressure of 0.1 ppm or less in a state where the first plane is exposed;
• forming a first electrode on the first plane;
• and
• forming a second electrode on the second plane.