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US 10,381,489 B2Granted
Tunnel field effect trasnsistor
AssigneesNational University Corporation Hokkaido University, Japan Science and Technology Agency
InventorsTakashi Fukui, Katsuhiro Tomioka
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Abstract
The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
Claims5
A tunnel-field-effect transistor comprising:
- a substrate
- a core-multishell nanowire including a channel connected with the substrate, the channel being disposed in a center of the core-multishell nanowire;
- one of a source electrode and a drain electrode connected with the substrate;
- the other of the source electrode and the drain electrode connected with the core-multishell nanowire;
- a gate insulating film disposed on a side surface of the core-multishell nanowire;
- and
- a gate electrode disposed on the gate insulating film so as to surround the core-multishell nanowire, the date electrode being configured to operate such that an electric field acts on at least a art of the core-multishell nanowire to cause tunneling at a junction interface between the substrate and the channel while generating two-dimensional electron gas at the channel.
4 more elements
Dependencies are inferred from the claim text.