Multi-layer photoresist
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Ren Zi, Ching-Yu Chang, Chin-Hsiang Lin
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Abstract
A method includes spin-coating a first metal-free layer over the substrate, depositing a metal-containing layer over the first metal-free layer, spin-coating a second metal-free layer over the first metal-containing layer, forming a photoresist layer over the second metal-free layer, the photoresist layer including a first metallic element, exposing the photoresist layer, and subsequently developing the photoresist layer to form a pattern. The metal-containing layer includes a second metallic element selected from zirconium, tin, lanthanum, or manganese, and the first metallic element is selected from zirconium, tin, cesium, barium, lanthanum, indium, silver, or cerium.
Claims20
A method comprising:
- providing a substrate;
- forming a first layer over the substrate, wherein the first layer is substantially free of any metallic element;
- forming a second layer over the first layer, wherein the second layer includes a first metallic element;
- forming a third layer over the second layer, wherein the third layer is substantially free of any metallic element;
- forming a photoresist layer over the third layer, wherein the photoresist layer includes a second metallic element;
- exposing the photoresist layer to a radiation source;
- and
- developing the photoresist layer to form a photoresist pattern.
A method, comprising:
- providing a substrate;
- forming a composite structure over the substrate, the composite structure including:
- a first layer formed over the substrate, wherein the first layer is substantially free of any metallic element;
- a second layer formed over the first layer, wherein the second layer includes a first metallic element;
- and
- a third layer formed over the second layer, wherein the third layer is substantially free of any metallic element;
- forming a photoresist layer over the composite structure, wherein the photoresist layer includes a second metallic element;
- exposing the photoresist layer;
- developing the photoresist layer to form a photoresist pattern;
- preforming a first etching process using the photoresist pattern as an etch mask to form a patterned third layer, wherein the first etching process removes portions of the third layer without substantially removing portions of the second layer;
- performing a second etching process using the patterned third layer as an etch mask to form a patterned second layer, wherein the second etching process removes portions of the second layer without substantially removing portions of the first layer;
- and
- performing a third etching process using the patterned second layer as an etch mask to form a patterned first layer, wherein the third etching process removes portions of the first layer without substantially removing portions of the substrate.
A method, comprising:
- spin-coating a first metal-free layer over a substrate;
- depositing a metal-containing layer over the first metal-free layer;
- spin-coating a second metal-free layer over the metal-containing layer;
- forming a photoresist layer over the second metal-free layer, wherein the photoresist layer includes a first metallic element;
- exposing the photoresist layer;
- and
- developing the photoresist layer to form a photoresist pattern.
Dependencies are inferred from the claim text.