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US 10,381,480 B2Granted
Reliable gate contacts over active areas
AssigneeInternational Business Machines Corporation
InventorsEmre Alptekin, Albert M. Chu, Eric Eastman, Myung-Hee Na, Ravikumar Ramachandran
Life of this patent
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Abstract
A method for manufacturing a semiconductor device comprises forming a plurality of fins in an active region, forming a plurality of gates around the plurality of fins in the active region, forming one or more gate contacts in the active region, and forming a plurality of contacts to source/drain regions in the active region.
Claims9
A method for manufacturing a semiconductor device, comprising:
- forming a plurality of fins in an active region;
- forming a plurality of gates around the plurality of fins in the active region;
- forming one or more gate contacts in the active region;
- and
- forming a plurality of trench silicide contacts to source/drain regions in the active region;
- wherein one or more of the plurality of trench silicide contacts are formed over less than the number of the plurality of fins in the active region;
- and
- wherein the one or more gate contacts overlap one or more fins of the plurality of fins in the active region lacking a trench silicide contact formed thereon.
5 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a plurality of fins in an active region;
- forming respective epitaxial regions on the plurality of fins;
- forming one or more gate contacts in the active region;
- and
- forming a trench silicide contact in the active region on the respective epitaxial regions of less than a number of the plurality of fins;
- wherein the one or more gate contacts overlap one or more fins of the plurality of fins in the active region lacking the trench silicide contact formed thereon.
3 more elements
Dependencies are inferred from the claim text.