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AssigneeInfineon Technologies AG
InventorsAndreas Peter Meiser, Till Schloesser
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A semiconductor device in a semiconductor substrate having a first main surface includes a transistor array and a termination region. The transistor array includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel in the body region. The body region and the drift zone are disposed along a first horizontal direction between the source region and the drain region. The transistor array further includes first field plate trenches in the drift zone. A longitudinal axis of the first field plate trenches extends in the first horizontal direction. The semiconductor device further includes a second field plate trench, a longitudinal axis of the second field plate trench extending in a second horizontal direction perpendicular to the first direction.
A semiconductor device in a semiconductor substrate having a first main surface including a transistor array and a termination region, the transistor array comprising:
A semiconductor device comprising a power transistor in a semiconductor substrate, the semiconductor substrate comprising a first semiconductor substrate portion of a first conductivity type at a first main surface of the semiconductor substrate and a second substrate portion of a second conductivity type at the first main surface, the power transistor comprising:
A method of manufacturing a semiconductor device comprising a power transistor in a semiconductor substrate, the method comprising:
Dependencies are inferred from the claim text.