Vertical transport fin field effect transistors on a substrate with varying effective gate lengths

A plurality of vertical transport fin field effect transistors on a substrate, comprising:

• a bottom source/drain layer on a substrate, wherein the bottom source/drain layer covers a first region of the substrate and an adjoining second region of the substrate, wherein the bottom source/drain layer includes an n-type dopant;
• at least one vertical fin on the bottom source/drain layer on the first region of the substrate;
• at least one vertical fin on the bottom source/drain layer on the second region of the substrate;
• a first top source/drain having a height, H1, on the at least one vertical fin on the first region of the substrate;
• and
• a second top source/drain having a height, H2, on the at least one vertical fin on the second region of the substrate, wherein the combined height of the first top source/drain, the at least one vertical fin on the first region of the substrate, and the bottom source/drain layer is the same as the combined height of the second top source/drain, the at least one vertical fin on the second region of the substrate, and the bottom source/drain layer, and the height, H2, of the second top source/drain is greater than the height, H1, of the first top source/drain.

A plurality of vertical transport fin field effect transistors on a substrate, comprising:

• a bottom source/drain layer on a substrate, wherein the bottom source/drain layer covers a first region of the substrate and an adjoining second region of the substrate, wherein the bottom source/drain layer includes an n-type dopant;
• at least one vertical fin on the bottom source/drain layer on the first region of the substrate, wherein the at least one vertical fin on the first region of the substrate has a height in a range of about 30 nm to about 125 nm;
• at least one vertical fin on the bottom source/drain layer on the second region of the substrate, wherein the at least one vertical fin on the second region of the substrate has a height in a range of about 20 nm to about 124 nm;
• a first top source/drain having a height, H1, on the at least one vertical fin on the first region of the substrate;
• a bottom spacer on the bottom source/drain layer;
• and
• a second top source/drain having a height, H2, on the at least one vertical fin on the second region of the substrate, wherein the combined height of the first top source/drain, the at least one vertical fin on the first region of the substrate, and the bottom source/drain layer is the same as the combined height of the second top source/drain, the at least one vertical fin on the second region of the substrate, and the bottom source/drain layer, and the height, H2, of the second top source/drain is greater than the height, H1, of the first top source/drain.