Power semiconductor device

A power semiconductor device, comprising:

• a substrate having a top side;
• a main body including an active portion disposed on said substrate, an edge termination portion disposed on said topside of said substrate and surrounding said active portion, and an insulating layer disposed on said edge termination portion and spaced apart from said substrate, said edge termination portion including an edge termination top surface underlying said insulating layer, a first-type semiconductor region that extends from said top side of said substrate to said edge termination top surface, and a plurality of spaced-apart second-type semiconductor segments distributed in said first-type semiconductor region, said spaced-apart second-type semiconductor segments being arranged at intervals along a Y-direction directing from said insulating layer toward said substrate, said spaced-apart second-type semiconductor segments being arranged to have at least one interval along an X-direction that is perpendicular to the Y-direction and that directs from said active portion toward said edge termination portion;
• and
• an electrode unit including a first electrode that is disposed on said insulating layer and that is electrically coupled to said active region, and a second electrode that is disposed on said substrate and that is spaced apart from said main body.