Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a switching device including:
• a substrate that is configured by a semi-insulating material or a semiconductor;
• a channel forming layer that is arranged on the substrate, and that is configured by a compound semiconductor having a group 13 nitride as a main component;
• a gate structure that is configured by a gate electrode on the channel forming layer with a gate insulating film interposed between the gate electrode and the channel forming layer;
• and
• a source electrode and a drain electrode that are arranged on the channel forming layer, and that are arranged at both sides of the gate structure respectively;
• a collapse inhibiting layer that is arranged on the channel forming layer in an element region of the channel forming layer where the switching device is arranged, and that is configured by an insulating material having nitrogen or aluminum;
• and
• a leakage inhibiting layer that is arranged on the channel forming layer in an element isolation region of the channel forming layer surrounding the element region, and that is configured by an insulating material different from the insulating material of the collapse inhibiting layer, wherein
• in the element region of the channel forming layer, the collapse inhibiting layer is configured to cover a surface of the channel forming layer excluding a part of the surface where the gate structure is arranged or another part of the surface where the source electrode and the drain electrode are arranged,
• the collapse inhibiting layer is disposed on both sides of the source electrode and both sides of the drain electrode, and
• the collapse inhibiting layer is in contact with the gate insulating film.