Nanoparticle based computing architecture
AssigneeThe Florida International University Board of Trustees
InventorsSakhrat Khizroev, Rakesh Guduru
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Abstract
A spintronic device can include a bottom contact layer, a bottom magnetic layer disposed on the bottom contact layer, a nanoparticle layer disposed on the bottom magnetic layer, a top magnetic layer disposed on the nanoparticle layer, and a top contact layer disposed on the top magnetic layer. The spintronic device can include a bottom insulation layer disposed between the bottom magnetic layer and the nanoparticle layer, and a top insulation layer disposed between the nanoparticle layer and the top magnetic layer.
Claims17
A spintronic device, comprising:
- a bottom contact layer;
- a top contact layer disposed on the bottom contact layer;
- and
- a dual magnetic junction layer disposed between the bottom contact layer and the top contact layer,
- the dual magnetic junction layer comprising a bottom magnetic layer disposed on the bottom contact layer, a bottom insulation layer disposed on the bottom magnetic layer, a nanoparticle layer disposed on the bottom insulation layer, a top insulation layer disposed on the nanoparticle layer, and a top magnetic layer disposed on the top insulation layer.
A spintronic device, comprising:
- a bottom contact layer;
- a bottom magnetic layer disposed on the bottom contact layer;
- a nanoparticle layer disposed on the bottom magnetic layer;
- a top magnetic layer disposed on the nanoparticle layer;
- a top contact layer disposed on the top magnetic layer;
- a bottom insulation layer disposed between the bottom magnetic layer and the nanoparticle layer;
- and
- a top insulation layer disposed between the nanoparticle layer and the top magnetic layer.
A spintronic device, comprising:
- a bottom contact layer;
- a bottom magnetic layer disposed on the bottom contact layer;
- a bottom insulation layer disposed on the bottom magnetic layer;
- a plurality of magnetic nanoparticles disposed on the bottom insulation layer;
- a top insulation layer disposed on the plurality of magnetic nanoparticles;
- a top magnetic layer disposed on the top insulation layer;
- and
- a top contact layer disposed on the top magnetic layer,
- a bottom magnetization direction of the bottom magnetic layer and a top magnetization direction of the top magnetic layer being anti-parallel to each other, and each of the bottom magnetic layer and the top magnetic layer being a CoFeB-based ferromagnetic layer,
- each of the plurality of magnetic nanoparticles being a CoFe2O4-based ferromagnetic nanoparticle and a size of each magnetic nanoparticle being equal to or less than 2 nm, and
- each of magnetic nanoparticles being spaced apart from the bottom magnetic layer and the top magnetic layer by the bottom insulation layer and the top insulation layer, respectively.
Dependencies are inferred from the claim text.