Method for manufacturing semiconductor device
AssigneesSemiconductor Manufacturing Int'l (Shanghai) Corporation, Semiconductor Manufacturing Intl. (BEIJING) Corp.
InventorXinyun Xie
Life of this patent
Estimating the term…
Abstract
This disclosure relates to the technical field of semiconductors, and discloses a method for manufacturing semiconductor FinFET devices. The method particularly includes pre-removal of a predetermined thickness of a first region of an isolation region on sides of a fin that is not covered by a pseudo gate such that when a layer of second region of the isolation region covered by the pseudo gate is sacrificially removed during a removal of the pseudo gate, the upper surfaces of the remaining first region and the remaining second region of the isolation region are approximately leveled. By using such a method, DC and AC performances of a resulting FinFET device is improved.
Claims7
A method for manufacturing a semiconductor device, comprising:
- providing a substrate structure, wherein the substrate structure comprises:
- a substrate;
- a semiconductor fin on the substrate;
- a dielectric layer on the semiconductor fin;
- an isolation region at sides of the semiconductor fin, wherein an upper surface of the isolation region is lower than an upper surface of the semiconductor fin, wherein the isolation region comprises a first region and a second region;
- and
- a pseudo gate covering a portion of the dielectric layer and the first region of the isolation region, wherein the second region of the isolation region is located on two sides of the pseudo gate;
- removing a portion of the second region for a predetermined removal depth, so that an upper surface of the remaining second region is lower than an upper surface of the first region;
- growing an epitaxial source and drain on the semiconductor fin on sides of the pseudo gate;
- removing the pseudo gate and the dielectric layer below the pseudo gate to form a groove, wherein the predetermined removal depth is approximately equal to a sacrificially removed depth of the first region when removing the pseudo gate;
- and
- forming a gate structure in the groove.
Dependencies are inferred from the claim text.