Method of forming a semiconductor device with an injector having first and second outlets

A method of forming a semiconductor device, comprising:

• loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber;
• heating the inside of the chamber;
• and
• rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition,
• wherein the injector includes:
• a first outlet exposed within the chamber, the first outlet configured to discharge the carrier gas directly into the chamber;
• and
• a second outlet exposed within the chamber, the second outlet configured to discharge the reactive gas directly into the chamber,
• wherein the first outlet is disposed below the second outlet, and
• wherein the first forming the film comprises controlling a flow rate of the reactive gas by controlling a flow rate of the carrier gas.