Wrap-around contact integration scheme

A substrate processing method, comprising:

• providing a substrate containing a raised contact in a first dielectric film, and a second dielectric film on the first dielectric film, wherein the second dielectric film has a recessed feature with a sidewall and a bottom portion above the raised contact, wherein the raised contact is buried under the first dielectric film;
• depositing a conformal metal oxide film on the sidewall and on the bottom portion;
• removing the conformal film from the bottom portion in a first anisotropic etching process, wherein the remaining conformal film forms a protection film on the sidewall and defines a width of the recessed feature;
• extending the recessed feature to the raised contact and exposing the raised contact using a second anisotropic etching process;
• forming a cavity containing the raised contact in an isotropic etching process, wherein a width of the cavity is greater than the width of the recessed feature;
• and
• filling the recessed feature and the cavity with a metal.

A substrate processing method, comprising:

• providing a substrate containing a raised contact in a first dielectric film, and a second dielectric film on the first dielectric film, wherein the second dielectric film has a recessed feature with a sidewall and a bottom portion above the raised contact, wherein the raised contact is buried under the first dielectric film;
• depositing a conformal film on the sidewall and on the bottom portion of the recessed feature;
• removing the conformal film from the bottom portion in a first anisotropic etching process, wherein the remaining conformal film forms a protection film on the sidewall and defines a width of the recessed feature;
• forming a cavity containing the raised contact in an isotropic etching process, wherein a width of the cavity is greater than the width of the recessed feature;
• and
• depositing barrier layer in the recessed feature and in the cavity.