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US 10,381,444 B2Granted
Manufacturing method of semiconductor device
AssigneeRenesas Electronics Corporation
InventorYouichi Yamamoto
Life of this patent
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Abstract
To improve the performance of a semiconductor device, there is provided with a manufacturing method of a semiconductor device including a step of removing an oxide film formed on the surface of a silicon carbide substrate including the inner wall of a trench, before forming the hydrogen annealing.
Claims13
A manufacturing method of a semiconductor device, comprising the following steps of:
- (a) preparing a silicon carbide substrate;
- (b) forming a trench on a surface of the silicon carbide substrate;
- (c) introducing conductivity type dopant to a bottom of the trench;
- (d) after the step (c), forming a heat resistant film to bury the trench and cover the surface of the silicon carbide substrate, containing carbon;
- (e) after the step (d), performing thermal processing to activate the conductivity type dopant;
- (f) after the step (e), removing the heat resistant film;
- (g) removing an insulating film formed on the surface of the silicon carbide substrate including an inner wall of the trench through the step (f);
- and
- (h) after the step (g), performing hydrogen annealing on the silicon carbide substrate where the trench is formed.
6 more elements
Dependencies are inferred from the claim text.