Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a first electrode including a first conductive region;
• a second electrode including a second conductive region;
• a third electrode, a first direction from a portion of the third electrode toward the first conductive region crossing a second direction from the second conductive region toward the first conductive region, a direction from another portion of the third electrode toward the second conductive region being aligned with the first direction;
• a first semiconductor region of a first conductivity type, the first semiconductor region including silicon carbide and including first to fourth partial regions,
• the first partial region being positioned between the first conductive region and the portion of the third electrode in the first direction,
• the second partial region being positioned between the second conductive region and the another portion of the third electrode in the first direction,
• the third partial region being positioned between the first partial region and the second partial region in the second direction,
• a direction from the third partial region toward the fourth partial region being aligned with the first direction,
• a direction from the fourth partial region toward the first conductive region being aligned with the second direction;
• a second semiconductor region of the first conductivity type, the second semiconductor region including silicon carbide and including a fifth partial region, the fourth partial region being positioned between the third partial region and the fifth partial region in the first direction, a direction from the fifth partial region toward the first conductive region being aligned with the second direction;
• a third semiconductor region of a second conductivity type, the third semiconductor region including silicon carbide and including a sixth partial region provided between the fourth partial region and the fifth partial region in the first direction;
• a fourth semiconductor region of the second conductivity type, the fourth semiconductor region including silicon carbide, being electrically connected to the second conductive region, and including a first portion and a second portion,
• the first portion being positioned between the first partial region and the first conductive region in the first direction,
• a direction from the first conductive region toward the second portion being aligned with the second direction,
• the second portion being continuous with the first portion;
• and
• a first insulating film including first to third insulating regions,
• the first insulating region being positioned between the first portion and the first conductive region,
• the second insulating region contacting the fourth partial region and the sixth partial region and being positioned between the fourth partial region and the first conductive region, between the sixth partial region and the first conductive region, and between the fifth partial region and the first conductive region,
• the third insulating region being positioned between the second portion and the first conductive region.