Leakage current reduction in stacked metal-insulator-metal capacitors
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Hemanth Jagannathan, Paul C. Jamison, John Rozen
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Abstract
Capacitors and methods of forming the same include forming an oxygenated dielectric layer on a first conductive layer. A second conductive layer is formed on the oxygenated dielectric layer. The oxygenated dielectric layer is heated to release the oxygen from the oxygenated dielectric layer and to oxidize the first and second conductive layers at interfaces between the dielectric layer and the first and second conductive layers, forming barrier layers at the interfaces.
Claims20
A method of forming a capacitor, comprising:
- forming an oxygenated dielectric layer on a first conductive layer;
- forming a second conductive layer on the oxygenated dielectric layer;
- and
- heating the oxygenated dielectric layer to release the oxygen from the oxygenated dielectric layer and to oxidize the first and second conductive layers at interfaces between the dielectric layer and the first and second conductive layers, forming barrier layers at the interfaces.
A method of forming a capacitor, comprising:
- forming a first conductive nitride layer directly on an interlayer dielectric;
- forming an oxygenated dielectric layer on the first conductive layer;
- forming a second conductive layer on the oxygenated dielectric layer;
- and
- heating the oxygenated dielectric layer to release the interstitial oxygen and to oxidize the first and second conductive layers at interfaces between the oxygenated dielectric layer and the first and second titanium nitride layers, forming barrier layers at the interfaces to reduce leakage current between the first and second titanium nitride layers.
Dependencies are inferred from the claim text.