Advanced metal insulator metal capacitor
AssigneeInternational Business Machines Corporation
InventorChih-Chao Yang
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Abstract
A pattern is defined in a dielectric layer. The dielectric layer includes a low-k dielectric region and a high-k dielectric region. The high-k dielectric region includes a phase change material which is an alloy of tantalum and nitrogen and is a high-k insulator in a deposited state. The pattern includes a first set of features in the low-k dielectric region and a second set of features in the high-k dielectric region. A surface treatment process is performed on the phase change layer to produce a top surface layer having electrically conductive properties. A metal layer is deposited in the first and second set of features. Thus, a set of conductive lines is formed in the low-k dielectric region and a metal insulator metal capacitor in the high-k dielectric region.
Claims16
An integrated circuit device including a metal insulator metal capacitor comprising:
- a dielectric layer having a low-k dielectric region comprised of a low-k dielectric material and a high-k dielectric region comprised of a high-k dielectric material;
- a set of conductive lines in the low-k dielectric region of the dielectric layer;
- a metal insulator metal capacitor in the high-k dielectric region, wherein an insulator structure of the metal insulator metal capacitor is a vertically oriented structure comprised of a phase change material which is the high-k insulator in a deposited state and each of a set of capacitor plates of the metal insulator metal capacitor is comprised of the phase change material converted to an electrically conductive state and disposed on either side of the vertically oriented structure, wherein the phase change material is deposited as a single layer.
A semiconductor structure comprising:
- a damascene interconnection structure in a low-k dielectric region of a dielectric layer, the low-k dielectric region comprised of a low-k dielectric;
- a metal insulator metal capacitor in a high-k dielectric region of the dielectric layer, the high-k region comprised of a high-k dielectric;
- wherein a set of capacitor plates of the metal insulator metal capacitor are disposed in trenches in the high-k dielectric region and an insulator structure of the metal insulator metal capacitor is a vertically oriented structure disposed between the capacitor plates, wherein each of the set of capacitor plates of the metal insulator metal capacitor is comprised of a phase change material in a first, electrically conductive state and the insulator structure is comprised of the phase change material in a second high-k insulator state, the phase change material in the high-k insulator state being the high-k dielectric.
Dependencies are inferred from the claim text.