Organic photoelectric device and image sensor and electronic device

An organic photoelectric device, comprising

• a first electrode and a second electrode facing each other, and
• a photoelectric conversion layer between the first electrode and the second electrode and selectively absorbing light in a green wavelength region,
• wherein the photoelectric conversion layer includes at least one first photoelectric conversion material having a peak absorption wavelength (λmax1) of less than about 540 nm and at least one second photoelectric conversion material having a peak absorption wavelength (λmax2) of greater than or equal to about 540 nm,
• the photoelectric conversion layer includes at least one p-type semiconductor and at least one n-type semiconductor to form a pn junction, and
• each of the first photoelectric conversion material and the second photoelectric conversion material is the at least one p-type semiconductor.

An organic photoelectric device, comprising

• a first electrode and a second electrode facing each other, and
• a photoelectric conversion layer between the first electrode and the second electrode and selectively absorbing light in a green wavelength region,
• wherein the photoelectric conversion layer includes at least one first photoelectric conversion material having a peak absorption wavelength (λmax1) of less than about 540 nm and at least one second photoelectric conversion material having a peak absorption wavelength (λmax2) of greater than or equal to about 540 nm, and
• the first photoelectric conversion material and the second photoelectric conversion material independently include a light absorption material represented by Chemical Formula 1:
• EDG—HA—EAG [Chemical Formula 1]
• wherein, in Chemical Formula 1,
• HA is a C2 to C30 heterocyclic group having at least one of Se, Te, S, and Si,
• EDG is an electron donating group, and
• EAG is an electron accepting group.