Electronic device

An electronic device, comprising a semiconductor memory that includes:

• a first line;
• a second line being spaced apart from the first line and extending in a direction crossing the first line;
• a third line being spaced apart from the second line and extending in a direction crossing the second line;
• a first variable resistance element interposed between the first line and the second line, the first variable resistance element overlapping an intersection of the first line and the second line and including a first electrode layer, a first variable resistance layer, and a second electrode layer, which are stacked in a direction from the first line toward the second line;
• a second variable resistance element interposed between the second line and the third line, the second variable resistance element overlapping an intersection of the second line and the third line and including a third electrode layer, a second variable resistance layer, and a fourth electrode layer, which are stacked in a direction from the second line toward the third line, where a difference in Seebeck coefficients between a material of the first and third electrode layers and a material of the first and second variable resistance layers is different from a difference in Seebeck coefficients between a material of the second and fourth electrode layers and the material of the first and second variable resistance layers;
• and
• a material layer coupled in series to the second variable resistance element and disposed between the second line and the third line, the material layer having an electrical resistance.

An electronic device, comprising a semiconductor memory that includes:

• a first line;
• a second line spaced apart from the first line, the second line extending in a direction that crosses the first line;
• a third line spaced apart from the second line, the third line extending in a direction that crosses the second line;
• a first variable resistance element interposed between the first line and the second line, the first variable resistance element overlapping an intersection of the first line and the second line and having a multi-layered structure including a first variable resistance layer;
• a second variable resistance element interposed between the second line and the third line, the second variable resistance element overlapping an intersection of the second line and the third line and having a multi-layered structure including a second variable resistance layer;
• and
• a material layer having an electrical resistance,
• wherein the material layer is interposed between the second variable resistance element and one of the second line and the third line, and
• wherein a current flow path to the second variable resistance layer is longer than a current flow path to the first variable resistance layer.

An electronic device, comprising a semiconductor memory that includes:

• a first line;
• a second line being spaced apart from the first line and extending in a direction that crosses the first line;
• a third line being spaced apart from the second line and extending in a direction that crosses the second line;
• a first variable resistance element interposed between the first line and the second line, the first variable resistance element overlapping an intersection of the first line and the second line and including a first phase change material;
• a second variable resistance element interposed between the second line and the third line, the second variable resistance element overlapping an intersection of the second line and the third line and including a second phase change material, a magnitude of a current required for a phase change of the second phase change material being smaller than a magnitude of a current required for a phase change of the first phase change material when a direction of a current flowing through the first variable resistance element is opposite to a direction of a current flowing through the second variable resistance element;
• and
• a material layer connected in series with the second variable resistance element and disposed between the second line and the third line, the material layer exhibiting an electrical resistance.