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US 10,381,407 B2Granted
Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
AssigneeSK hynix Inc.
InventorsBeom Yong Kim, Soo Gil Kim
Life of this patent
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Abstract
A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.
Claims22
A switch comprising:
- a first electrode layer having a first surface;
- a second electrode layer having a second surface that faces the first surface and being disposed over the first electrode layer;
- and
- a gas layer interposed between the first surface of the first electrode layer and the second surface of the second electrode layer, one or both of the first surface of the first electrode layer and the second surface of the second electrode layer directly contacting the gas layer,
- wherein a current flows or does not flow across the gas layer according to a value of a voltage applied to the switch, and the current flows across the gas layer in an on-state, and the current does not flow across the gas layer in an off-state.
2 more elements
A resistive memory cell comprising:
- a first electrode layer;
- a second electrode layer having a first surface and being disposed over the first electrode layer;
- a third electrode layer having a second surface that faces the first surface and being disposed over the second electrode layer;
- a variable resistance layer interposed between the first electrode layer and the second electrode layer;
- and
- a selecting element layer interposed between the second electrode layer and the third electrode layer, the selecting element layer including a gas layer disposed between the first surface of the second electrode layer and the second surface of the third electrode layer,
- wherein a current flows or does not flow across the gas layer according to a voltage applied to the resistive memory cell, one or both of the first surface of the second electrode layer and the second surface of the third electrode layer directly contacting the gas layer.
4 more elements
An electronic device comprising:
- a memory element storing data;
- and
- a selecting element electrically connected to the memory element, the selecting element including a gas layer interposed between a first surface of a first electrode layer and a second surface of a second electrode layer, wherein the first surface and the second surface face each other and one or both of the first surface of the first electrode layer and the second surface of the second electrode layer directly contact the gas layer,
- wherein a current flows or does not flow across the gas layer according to a value of a signal applied to the electronic device, and
- wherein the selecting element controls access to the memory element by preventing the current from flowing to the memory element when the value is less than a threshold value, and allowing the current to flow to the memory element when the value is equal to or greater than the threshold value.
2 more elements
Dependencies are inferred from the claim text.