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US 10,381,404 B2Granted
Integrated circuits with memory cells and methods for producing the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsBhushan Bharat, Juan Boon Tan, Danny Pak-Chum Shum, Yi Jiang, Wanbing Yi
Life of this patent
Estimating the term…
Abstract
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate having a buried insulator layer and an active layer overlying the buried insulator layer. A transistor overlies the buried insulator layer, and a memory cell underlies the buried insulator layer. As such, the memory cell and the transistor are on opposite sides of the buried insulator layer.
Claims17
An integrated circuit comprising:
- a substrate comprising a buried insulator layer and an active layer overlying the buried insulator layer;
- a transistor overlying the buried insulator layer;
- a memory cell underlying the buried insulator layer such that the memory cell and the transistor are on opposite sides of the buried insulator layer;
- a first bottom dielectric layer underlying the buried insulator layer;
- a second bottom dielectric layer underlying the first bottom dielectric layer;
- a source line overlying the buried insulator layer;
- and
- a bit line underlying the buried insulator layer, such that the source line and the bit line are on opposite sides of the buried insulator layer.
5 more elements
An integrated circuit comprising:
- a substrate comprising a buried insulator layer and an active layer overlying the buried insulator layer;
- a transistor overlying the buried insulator layer, wherein the transistor comprises a source and a drain;
- a source line overlying the buried insulator layer, wherein the source line is in electrical communication with the source;
- a bit line underlying the buried insulator layer such that the bit line and the source line are on opposite sides of the buried insulator layer;
- and
- a memory cell, wherein the memory cell is in electrical communication with the bit line.
3 more elements
Dependencies are inferred from the claim text.