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US 10,381,403 B1Granted
MRAM device with improved seal ring and method for producing the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYi Jiang, Bharat Bhushan, Curtis Chun-I Hsieh, Mahesh Bhatkar, Wanbing Yi, Juan Boon Tan
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Abstract
A method for forming a MRAM device free of seal ring peeling defect, and the resulting device, are provided. Embodiments include forming magnetic tunnel junction (MTJ) over a metallization layer in a seal ring region of an MRAM device; forming a metal filled via connecting the MTJ and the metallization layer; forming a tunnel junction via over the MTJ; and forming a top electrode over the tunnel junction via.
Claims20
A device comprising:
- a magnetic tunnel junction (MTJ) formed over a metallization layer in a seal ring region of an MRAM device;
- a metal filled via connecting the MTJ and the metallization layer;
- a tunnel junction via formed over the MTJ;
- and
- a top electrode formed over the tunnel junction via.
2 more elements
A method comprising:
- forming magnetic tunnel junction (MTJ) over a metallization layer in a seal ring region of an MRAM device;
- forming a metal filled via connecting the MTJ and the metallization layer;
- forming a tunnel junction via over the MTJ;
- and
- forming a top electrode over the tunnel junction via.
2 more elements
A method comprising:
- forming a copper (Cu) metallization layer in a dielectric layer a seal ring region of an STT-MRAM device;
- forming a magnetic tunnel junction (MTJ) over the metallization layer in the seal ring region;
- forming a Cu filled via connecting the MTJ and the metallization layer;
- forming a Cu filled tunnel junction via over the MTJ;
- and
- forming a top Cu electrode over the tunnel junction via.
3 more elements
Dependencies are inferred from the claim text.