Semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorShin Hasegawa
Life of this patent
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Abstract
Provided is a semiconductor device including: a first substrate having a first primary surface, a second primary surface, and a side surface; a semiconductor element formed on the first primary surface; a first electrode formed on the first primary surface and connected to the semiconductor element on the first primary surface; a second electrode formed on the second primary surface; a through-electrode formed so as to penetrate the first substrate and connecting the first electrode and the second electrode to each other; a second substrate bonded to the first substrate so as to face the first primary surface; and a third electrode formed on the side surface of the first substrate and connected to the second electrode.
Claims13
A semiconductor device comprising:
- a first substrate having a first primary surface, a second primary surface, an internal side surface which surrounds a through-hole formed in the first substrate, and an outer side surface which surrounds at least a part of the first substrate;
- a semiconductor element formed on the first primary surface;
- a first electrode formed on the first primary surface and connected to the semiconductor element on the first primary surface;
- a second electrode formed on the second primary surface;
- a through-electrode formed in the through-hole, the through-hole being formed so as to penetrate the first substrate, and the through-electrode connecting the first electrode and the second electrode to each other;
- a second substrate bonded to the first substrate so as to face the first primary surface;
- and
- a third electrode formed on the outer side surface of the first substrate and connected to the second electrode.
Dependencies are inferred from the claim text.