Solid state imaging device, manufacturing method of solid state imaging device, and imaging system

An imaging system comprising:

• a solid state imaging device;
• and
• a signal processing unit that processes a signal output by the solid state imaging device;
• wherein the solid state imaging device comprises:
• a semiconductor substrate including a first region, a second region, and a third region, which are arranged in a plane along a surface of the semiconductor substrate, and the third region is absent between the first region and the second region;
• a first gate electrode of a first transistor, the first gate electrode being on the first region of the semiconductor substrate;
• a second gate electrode of a second transistor, the second gate electrode being on the second region of the semiconductor substrate and adjacent to the first gate electrode;
• an insulator arranged on the semiconductor substrate, and a portion of the insulator is arranged between the first gate electrode and the second gate electrode;
• an insulating film covering the first gate electrode and the second gate electrode;
• and
• a light shielding member arranged between the insulating film and the third region of the semiconductor substrate,
• wherein a void is present between the insulating film and the portion of the insulator arranged between the first gate electrode and the second gate electrode.

A CMOS image sensor comprising:

• a semiconductor substrate including a first region, a second region, and a third region, which are arranged in a plane along a surface of the semiconductor substrate;
• a first gate electrode of a first transistor, the first gate electrode being on the first region of the semiconductor substrate;
• a second gate electrode of a second transistor, the second gate electrode being on the second region of the semiconductor substrate and adjacent to the first gate electrode;
• an insulator arranged on the semiconductor substrate, and a portion of the insulator is arranged between the first gate electrode and the second gate electrode;
• an insulating film covering the first gate electrode and the second gate electrode;
• and
• a light shielding member arranged between the insulating film and the third region of the semiconductor substrate,
• wherein a void is present above a portion between the insulating film and the portion of the insulator arranged between the first gate electrode and the second gate electrode.