Method for forming semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChia-Fu Hsu, Chun-Yuan Wu
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Abstract
The present invention provides a method of forming a semiconductor device. First, a substrate having a first insulating layer formed thereon is provided. After forming an oxide semiconductor layer on the first insulating layer, two source/drain regions are formed on the oxide semiconductor layer. A bottom oxide layer is formed to entirely cover the source/drain regions, following by forming a high-k dielectric layer on the bottom oxide layer. Next, a thermal process is performed on the high-k dielectric layer, and a plasma treatment is performed on the high-k dielectric layer in the presence of a gas containing an oxygen element.
Claims11
A method for forming a semiconductor device, comprising:
- providing a substrate having a first insulating layer formed thereon;
- forming an oxide semiconductor layer on the first insulating layer;
- forming two source/drain regions on the oxide semiconductor layer, sidewalls of the two source/drain regions being vertical aligned with sidewalls of the oxide semiconductor layer respectively;
- forming a bottom oxide layer simultaneously covering the sidewalls of the source/drain regions and the sidewalls of the oxide semiconductor layer;
- forming a high-k dielectric layer on the bottom oxide layer;
- and
- performing an oxygen treatment on the high-k dielectric layer in the presence of a gas containing an oxygen element.
Dependencies are inferred from the claim text.