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US 10,381,370 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsYoo-cheol Shin, Young-woo Park, Jae-duk Lee
Life of this patent
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Abstract
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.
Claims17
A semiconductor device comprising:
- a first driving circuit region and a second driving circuit region on a first substrate to generate driving signals;
- a second substrate on the first and second driving circuit regions;
- a memory cell array region on the second substrate, the memory cell array region entirely overlapping the first driving circuit region and not or partially overlapping the second driving circuit region;
- a first upper interconnection layer on the memory cell array region;
- and
- a first vertical contact through the memory cell array region and the second substrate, the first vertical contact connecting the first upper interconnection layer to the first driving circuit region.
3 more elements
Dependencies are inferred from the claim text.