Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorKotaro Noda
Life of this patent
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Abstract
A semiconductor memory device according to an embodiment comprises: when three directions intersecting each other are assumed to be first through third directions, and two directions intersecting each other in a plane extending in the first and second directions are assumed to be fourth and fifth directions, a memory cell array including: a conductive layer stacked in the third direction above a semiconductor substrate and having a first region; and a first columnar body penetrating the first region of the conductive layer in the third direction and including a semiconductor film, the first columnar body having a cross-section along the first and second directions in which, at a first position which is a certain position in the third direction, a length in the fourth direction is shorter than a length in the fifth direction.
Claims20
A semiconductor memory device, comprising:
- when a first direction and a second direction intersect each other, and a third direction is orthogonal to the first and second directions,
- a memory cell array including:
- a conductive layer stacked in the third direction above a semiconductor substrate and extending in the first direction;
- a first semiconductor body extending in the third direction and including a semiconductor film;
- and a memory portion provided between the first semiconductor body and the conductive layer,
- the conductive layer having a side surface facing the second direction, and
- the first semiconductor body having a cross-section along the first and second directions in which, at a first position which is a certain position in the third direction, a length in the first direction is shorter than a length in the second direction.
A semiconductor memory device, comprising:
- when a first direction and a second direction intersect each other, and a third direction is orthogonal to the first and second directions,
- a memory cell array including:
- a conductive layer stacked in the third direction above a semiconductor substrate and extending in the first direction;
- a plurality of first semiconductor bodies extending in the third direction and including a semiconductor film;
- and a plurality of memory portions provided between the first semiconductor bodies and the conductive layer,
- the conductive layer having a side surface facing the second direction,
- one of the plurality of first semiconductor bodies having a cross-section along the first and second directions in which, at a first position which is a certain position in the third direction, a length in the first direction is shorter than a length in the second direction,
- the plurality of first semiconductor bodies including:
- a second semiconductor body;
- a third semiconductor body aligned in the first direction with the second semiconductor body;
- and a fourth semiconductor body disposed in between the second and third semiconductor bodies in the first direction and disposed at a different position to the second and third semiconductor bodies in the second direction, and
- at a first position which is a certain position in the third direction, a spacing between the second and third semiconductor bodies being longer than a spacing between the second and third semiconductor bodies.
A semiconductor memory device, comprising:
- when a first direction and a second direction intersect each other, and a third direction is orthogonal to the first and second directions,
- a memory cell array including:
- a conductive layer stacked in the third direction above a semiconductor substrate and extending in the first direction;
- a first semiconductor body extending in the third direction and including a semiconductor film;
- and a memory portion provided between the first semiconductor body and the conductive layer,
- the conductive layer having a side surface facing the second direction, and
- the first semiconductor body having a cross-section along the first and second directions which, at a first position which is a certain position in the third direction, has an oval shape having a long axis along the second direction.
Dependencies are inferred from the claim text.