Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

An elevationally-extending string of memory cells individually comprising a programmable charge storage transistor, comprising:

• vertically-alternating tiers of insulative material and control gate material;
• a channel pillar extending elevationally through multiple of the vertically-alternating tiers;
• the channel pillar comprising radially outer first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent;
• the channel pillar comprising second polysilicon-comprising material radially inward of the first polysilicon-comprising material, the second polysilicon-comprising material comprising less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material;
• tunnel insulator, programmable charge storage material, and control gate blocking insulator between the channel pillar and the control gate material of individual of the tiers of the control gate material;
• and
• the first polysilicon-comprising material comprising both elemental carbon and elemental nitrogen.

An elevationally-extending string of memory cells individually comprising a programmable charge storage transistor, comprising:

• vertically-alternating tiers of insulative material and control gate material;
• a channel pillar extending elevationally through multiple of the vertically-alternating tiers;
• the channel pillar comprising radially outer first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent;
• the channel pillar comprising second polysilicon-comprising material radially inward of the first polysilicon-comprising material, the second polysilicon-comprising material comprising less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material;
• tunnel insulator, programmable charge storage material, and control gate blocking insulator between the channel pillar and the control gate material of individual of the tiers of the control gate material;
• and the first polysilicon-comprising material and the second polysilicon-comprising material having at least 30 percent 111 crystal orientation as measured by EBSD.